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0.5µm CMOS Analog Mixed Mode
- 0.5µm P-Sub 1P3M(1-Poly and 3-Metal) Twin Well CMOS generic process.
- Transistor Characterizations are as follows;
Device |
Tr.type |
Vth [V] (*1) |
Ids [µA/µm] |
Ioff [pA/µm] |
PMOS |
6V Tr. |
-0.85 |
222 |
0.7 |
4V Tr. |
-0.85 |
120 |
0.15 |
Low Vth 3.3V |
-0.63 |
- |
0.43 |
Std. CMOS 3.3V |
-0.73 |
112 |
0.13 |
5V I/O |
-0.80 |
120 |
< 1 (Max) |
NMOS |
6V Tr. |
0.61 |
315 |
0.1 |
4V Tr. |
0.63 |
358 |
0.2 |
Low Vth 3.3V |
0.52 |
- |
0.2 |
Std. CMOS 3.3V |
0.79 |
327 |
0.08 |
5V I/O |
0.95 |
372 |
< 1 (Max) |
- (*1) Extrapolated Threshold at Vd=0.1V
- Vth tunable to match customer's needs.
- Depletion Transistor.
- Vertical PNP Transistor.
- Triple well.
- 2k-ohm/sq High Resistivity Poly Resister.
* Tunable high resistivity poly to match customer's needs.
- Low temperature coefficient Poly Resistor.
- Double Poly Capacitor (PiP).
- Laser Trimming Fuse.
- BSIM3V3 based on analog oriented extraction is used for SPICE simulation.
- SPICE parameters are ready for HSPICE, SPECTRE and Smart SPICE.
- Characterization report is available.
- Logic libraries and I/O libraries are available.
- ESD protection circuit is available.