Skip to main content Skip to first level navigation

RICOH imagine. change.

RICOH ELECTRONIC DEVICES CO., LTD.

Global
English
ricoh.com
Skip to main content First level navigation Menu
Contact Us About Us ricoh.com
Breadcrumbs
Facebook (Open link in new window) YouTube (Open link in new window) LinkedIn (Open link in new window)
Main content

0.8µm CMOS Analog Mixed Mode

Process Outline

  • 0.8µm P-Sub 1P2M(1-Poly and 2-Metal) Twin Well CMOS generic process.
  • Maximum operational voltage is 6V and maximum rating is 7V.
  • Transistor Characterizations are as follows;
Device Tr.type Vth [V] (*1) Ids [µA/µm] Ioff [pA/µm]
PMOS High Vth Tr. -0.85 - -
Std. Tr. -0.65 155 0.15
Low Vth Tr. -0.35 - -
NMOS High Vth Tr. 0.80 320 0.15
Std. Tr. 0.60 370 0.17
Low Vth Tr. 0.28 - -
  • (*1) Extrapolated Threshold at Vg=Vd=Vcc
  • Vth tunable to match customer's needs.

Option Modules

  • Depletion Transistor.
  • 2k and 10k-ohm/sq High Resistivity Poly Resistor.
    * Tunable high resistivity poly to match customer's needs.
  • Thin Film Resistor.
  • Low temperature coefficient Poly Resistor.
  • Laser Trimming Fuse.
  • Thick Metal (3µm).

Design Environment

  • BSIM3V3 based on analog oriented extraction is used for SPICE simulation.
  • SPICE parameters are ready for HSPICE, SPECTRE and Smart SPICE.
  • Characterization report is available.
  • ESD protection circuit is available.