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0.35µm CMOS Analog Mixed Mode
- 0.35µm P-Sub 3P3M(3-Poly and 3-Metal) Twin Well CMOS generic process.
- Transistor Characterizations are as follows;
Device |
Tr.type |
Vth [V] (*1) |
Ids [µA/µm] |
Ioff [pA/µm] |
PMOS |
6V Tr. |
-0.65 |
332 |
0.3 |
4V Tr. |
-0.80 |
264 |
0.2 |
3V Tr. |
-0.77 |
242 |
0.1 |
NMOS |
6V Tr. |
0.64 |
544 |
0.1 |
4V Tr. |
0.63 |
508 |
0.2 |
3V Tr. |
0.65 |
504 |
0.1 |
- (*1) Extrapolated Threshold at Vg=Vd=Vcc
- Vth tunable for customers' needs.
- Depletion Transistor.
- 15V Transistor and Drain 20V/Gate 6V Transistor.
- Vertical PNP Transistor.
- Triple well.
- 0.4k and 3.5k-ohm/sq High Resistivity Poly Resister.
* Tunable high resistivity poly to match customer's needs.
- Low temperature coefficient Poly Resistor.
- Double Poly Capacitor (PiP).
- Laser Trimming Fuse.
- BSIM3V3 based on analog oriented extraction is used for SPICE simulation.
- SPICE parameters are ready for HSPICE, SPECTRE and Smart SPICE.
- Characterization report is available.
- Logic libraries and I/O libraries are available.
- ESD protection circuit is available